PHOTOLUMINESCENCE OF ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：93

作者：

KAWAI, H

KANEKO, K

WATANABE, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 02期

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D O I：

10.1063/1.333933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：463 / 467

页数：5

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[1] CW ROOM-TEMPERATURE VISIBLE SINGLE QUANTUM WELL GA0.73AL0.27AS DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BURNHAM, RD
SCIFRES, DR
STREIFER, W
[J]. ELECTRONICS LETTERS, 1982, 18 (12) : 507 - 509
[2] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
STERN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643
[3] DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21
[4] ABRUPT GA1-XALXAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
GARNER, CM
SU, CY
SPICER, WE
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 335 - 337
[5] MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES
FRIJLINK, PM
MALUENDA, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L574 - L576
[6] GOLDSTEIN L, 1983, 30TH SPRING M JPN SO, P514
[7] LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPE
HERSEE, S
BALDY, M
ASSENAT, P
DECREMOUX, B
DUCHEMIN, JP
[J]. ELECTRONICS LETTERS, 1982, 18 (14) : 618 - 620
[8] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186
[9] HIGH AL-CONTENT VISIBLE (ALGA)AS MULTIPLE QUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KAWAI, H
MATSUDA, O
KANEKO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11): : L727 - L729
[10] ABRUPT TRANSITIONS IN COMPOSITION AND DOPING PROFILE IN GAAS-GA1-XALXAS HETEROSTRUCTURES BY ATMOSPHERIC-PRESSURE MOVPE
MALUENDA, J
FRIJLINK, PM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 334 - 337