LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPE

[1] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[2] ABRUPT GA1-XALXAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 335 - 337

[3] A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 53 - 57

[4] HOLANYAK N, 1980, IEEE J QUANTUM ELECT, V16, P170

[5] KRESSEL H, 1977, SEMICONDUCTOR LASERS, P270

[6] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 217 - 219

[7] A GRADED-INDEX WAVE-GUIDE SEPARATE-CONFINEMENT LASER WITH VERY LOW THRESHOLD AND A NARROW GAUSSIAN-BEAM [J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 134 - 137

[1] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[2] ABRUPT GA1-XALXAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 335 - 337

[3] A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 53 - 57

[4] HOLANYAK N, 1980, IEEE J QUANTUM ELECT, V16, P170

[5] KRESSEL H, 1977, SEMICONDUCTOR LASERS, P270

[6] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 217 - 219

[7] A GRADED-INDEX WAVE-GUIDE SEPARATE-CONFINEMENT LASER WITH VERY LOW THRESHOLD AND A NARROW GAUSSIAN-BEAM [J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 134 - 137