EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：253

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 03期

关键词：

D O I：

10.1063/1.93046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：217 / 219

页数：3

相关论文

共 18 条

[1]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[2]

BUTLER JK, 1977, SEMICONDUCTOR LASERS

[3]

CAPASSO F, UNPUB

[4]

CASEY HC, 1978, J APPL PHYS, V49, P3684, DOI 10.1063/1.325421

[5] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3042-3050

[6] SUPPRESSION OF INTERNALLY CIRCULATING MODES IN (GAAL)AS-GAAS HETEROSTRUCTURE LASERS AND THEIR EFFECT ON CATASTROPHIC DEGRADATION AND EFFICIENCY [J].

HENSHALL, GD .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :205-207

[7] AL-GA DISORDER IN ALXGA1-XAS ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MILLER, RC ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (04) :334-335

[8]

MILLER RE, COMMUNICATION

[9] GAIN-CURRENT RELATION FOR GAAS LASERS WITH N-TYPE AND UNDOPED ACTIVE LAYERS [J].

STERN, F .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :290-294

[10] (GAAL) AS LASERS WITH A HETEROSTRUCTURE FOR OPTICAL CONFINEMENT AND ADDITIONAL HETEROJUNCTIONS FOR EXTREME CARRIER CONFINEMENT [J].

THOMPSON, GH ;

KIRKBY, PA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :311-318