QUANTUM-WELL HETEROSTRUCTURE LASERS

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[2] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 19 - 21

[3] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY OF INP-IN1-XGAXP1-ZASZ (X-0.13,Z-0.29) BY QUANTUM-WELL LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 862 - 864

[4] SINGLE THIN-ACTIVE-LAYER VISIBLE-SPECTRUM IN1-XGAXP1-ZASZ HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2551 - 2556

[5] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

[6] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (21) : 1327 - 1330

[7] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[8] Dupuis R. D., 1979, Soviet Technical Physics Letters, V5, P52

[9] QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 756 - 761

[10] PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (03) : 128 - 135

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[2] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 19 - 21

[3] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY OF INP-IN1-XGAXP1-ZASZ (X-0.13,Z-0.29) BY QUANTUM-WELL LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 862 - 864

[4] SINGLE THIN-ACTIVE-LAYER VISIBLE-SPECTRUM IN1-XGAXP1-ZASZ HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2551 - 2556

[5] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

[6] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (21) : 1327 - 1330

[7] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[8] Dupuis R. D., 1979, Soviet Technical Physics Letters, V5, P52

[9] QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 756 - 761

[10] PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (03) : 128 - 135