TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES

被引：101

作者：

CHIN, R

HOLONYAK, N

VOJAK, BA

HESS, K

DUPUIS, RD

DAPKUS, PD

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[3] ROCKWELL INT,ELECTR RES CTR,DIV ELECTR DEVICES,ANAHEIM,CA 92803

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 01期

关键词：

D O I：

10.1063/1.91290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：19 / 21

页数：3

共 15 条

[1] THEORETICAL EFFECTS OF EXPONENTIAL BAND TAILS ON PROPERTIES OF INJECTION LASER
ADAMS, MJ
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (08) : 661 - +
[2] PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (03) : 128 - 135
[3] 700-H CONTINUOUS ROOM-TEMPERATURE OPERATION OF ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 311 - 314
[4] CONTINUOUS 300-DEGREES-K LASER OPERATION OF SINGLE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE DIODES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
CHIN, R
HOLONYAK, N
KIRCHOEFER, SW
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 265 - 267
[5] CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
HOLONYAK, N
KOLBAS, RM
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 487 - 489
[6] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
HOLONYAK, N
REZEK, EA
CHIN, R
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 295 - 297
[7] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERS
ETTENBERG, M
NUESE, CJ
KRESSEL, H
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2949 - 2950
[8] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS
GOODWIN, AR
PETERS, JR
PION, M
THOMPSON, GHB
WHITEAWAY, JEA
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 3126 - 3131
[9] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS
HAYASHI, I
PANISH, MB
REINHART, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &
[10] PHONON-SIDEBAND MO-CVD QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER
HOLONYAK, N
KOLBAS, RM
LAIDIG, WD
ALTARELLI, M
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 502 - 505

← 1 2 →