THEORETICAL EFFECTS OF EXPONENTIAL BAND TAILS ON PROPERTIES OF INJECTION LASER

Calculations have been made of various GaAs injection laser properties, assuming the high doping levels present in these devices to be responsible for the formation of band tails with density of states varying as exp( -E E0). Simple analytical expressions are obtained for carrier concentrations and emission rates, which are not possible for other forms of the band tail density of states. These expressions facilitate the solution of the laser kinetic equations and thus exact relations are derived for threshold currents, lasing frequencies, I-V characteristics, and light power outputs, both above and below threshold, within the scope of the initial approximation. © 1969.