ELECTRON INTRACTION EFFECTS ON RECOMBINATION SPECTRA

[1] ASNIN VM, 1963, SOV PHYS-SOL STATE, V5, P1257

[2] ASNIN VM, 1963, FIZ TVERD TELA, V5, P1730

[3] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1962, 125 (06): : 1965 - &

[4] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[5] A CONTRIBUTION TO THE THEORY OF SOFT X-RAY EMISSION BANDS OF SODIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1949, 62 (360): : 806 - 816

[6] LANDSBERG PT, 1965, LECTURES THEORETICAL

[7] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A553 - &

[8] ONE-DIMENSIONAL IMPURITY BANDS [J]. PHYSICAL REVIEW, 1958, 110 (01): : 41 - 49

[9] LEITE RCC, 1965, PHYS REV, V137, P1583

[10] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184

[1] ASNIN VM, 1963, SOV PHYS-SOL STATE, V5, P1257

[2] ASNIN VM, 1963, FIZ TVERD TELA, V5, P1730

[3] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1962, 125 (06): : 1965 - &

[4] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[5] A CONTRIBUTION TO THE THEORY OF SOFT X-RAY EMISSION BANDS OF SODIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1949, 62 (360): : 806 - 816

[6] LANDSBERG PT, 1965, LECTURES THEORETICAL

[7] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A553 - &

[8] ONE-DIMENSIONAL IMPURITY BANDS [J]. PHYSICAL REVIEW, 1958, 110 (01): : 41 - 49

[9] LEITE RCC, 1965, PHYS REV, V137, P1583

[10] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184