CONTINUOUS 300-DEGREES-K LASER OPERATION OF SINGLE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE DIODES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：47

作者：

DUPUIS, RD

DAPKUS, PD

CHIN, R

HOLONYAK, N

KIRCHOEFER, SW

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 04期

关键词：

D O I：

10.1063/1.90753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stripe-geometry single-quantum-well AlxGa1-xAs-GaAs double-heterostructure laser diodes (Lz∼200 Å) grown by metalorganic chemical vapor deposition are shown to operate continuously at 300°K on the first (n=1) electron-to-heavy-hole (e→hh) or first (n′=1′) electron-to-light-hole (e→lh) confined-particle transitions (hω-Eg∼11 meV). These laser diodes exhibit an external differential quantum efficiency as high as ηext∼80% (output power 5.4 mW at 65 mA drive current).

引用

页码：265 / 267

页数：3

共 14 条

[1]

ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1573

[2]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[3] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].