PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：68

作者：

DUPUIS, RD

DAPKUS, PD

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1979年 / 15卷 / 03期

关键词：

D O I：

10.1109/JQE.1979.1069974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：128 / 135

页数：8

相关论文

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[7] ROOM-TEMPERATURE OPERATION OF GA(1-X)A1XAS-GAAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALLORGANIC CHEMICAL VAPOR-DEPOSITION
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[8] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468
[9] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 406 - 407
[10] ROOM-TEMPERATURE OPERATION OF DISTRIBUTED-BRAGG-CONFINEMENT GA1-XALXAS-GAAS LASERS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 68 - 69

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