ROOM-TEMPERATURE OPERATION OF GA(1-X)A1XAS-GAAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALLORGANIC CHEMICAL VAPOR-DEPOSITION

被引：3

作者：

DUPUIS, RD ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] ROCKWELL INT,ELECTR RES CTR,ANAHEIM,CA 92803

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 09期

关键词：

D O I：

10.1109/T-ED.1977.18921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1195 / 1196

页数：2

相关论文

共 16 条

[1] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1289
[2] DISTRIBUTED-FEEDBACK DOUBLE-HETEROSTRUCTURE GAAS INJECTION LASER WITH FUNDAMENTAL GRATING
ANDERSON, DB
AUGUST, RR
COKER, JE
[J]. APPLIED OPTICS, 1974, 13 (12): : 2742 - 2744
[3] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE
BASS, SJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178
[4] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
CASEY, HC
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 288 - 290
[5] CONRAD RW, 1966, J ELECTROCHEM SOC, V113, P1991
[6] DUPUIS RD, TO BE PUBLISHED
[7] A LOW-THRESHOLD ROOM-TEMPERATURE INJECTION LASER
HAYASHI, I
PANISH, MB
FOY, PW
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (04) : 211 - &
[8] PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE FROM TRIMETHYLGALLIUM AND ARSINE
ITO, S
SHINOHARA, T
SEKI, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1419 - 1423
[9] JAYANTBALIGA B, 1974, J CRYSTAL GROWTH, V26, P314
[10] KRESSEL H, 1969, RCA REV, V30, P106