700-H CONTINUOUS ROOM-TEMPERATURE OPERATION OF ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：28

作者：

DUPUIS, RD

机构：

[1] Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 04期

关键词：

D O I：

10.1063/1.91121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Constant-current continuous room-temperature (∼26°C) operating times greater than 700 h have been achieved for AlxGa 1-xAs-GaAs multiple-quantum-well heterostructure injection lasers grown by metalorganic chemical vapor deposition. One device has shown essentially no degradation in its output characteristics during this time.

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页码：311 / 314

页数：4

相关论文

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DUPUIS RD, UNPUBLISHED