THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS

被引:88
作者
GOODWIN, AR [1 ]
PETERS, JR [1 ]
PION, M [1 ]
THOMPSON, GHB [1 ]
WHITEAWAY, JEA [1 ]
机构
[1] STAND TELECOMMUN LABS LTD, LONDON RD, HARLOW CM17 9NA, ESSEX, ENGLAND
关键词
D O I
10.1063/1.322009
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3126 / 3131
页数:6
相关论文
共 13 条
[1]  
[Anonymous], COMMUNICATION, P2490
[2]   VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].
CASEY, HC ;
MILLER, BI ;
PINKAS, E .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287
[3]   Electrical properties of the GaAs X-1C minima at low electric fields from a high-pressure experiment [J].
Fitt, G. D. ;
Lees, J. .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4144-4160
[4]  
Hall R. N., 1959, P IEEE, V106, P923, DOI [DOI 10.1049/PI-B-2.1959.0171, 10.1049/pi-b-2.1959.0171]
[5]   GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J].
HAYASHI, I ;
PANISH, MB ;
REINHART, FK .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :1929-&
[6]   CURRENT DEPENDENCE OF SPONTANEOUS CARRIER LIFETIMES IN GAAS-GA1-CHIALCHI AS DOUBLE-HETEROSTRUCTURE LASERS [J].
NAMIZAKI, H ;
KAN, H ;
ISHII, M ;
ITO, A .
APPLIED PHYSICS LETTERS, 1974, 24 (10) :486-487
[7]   PHASE EQUILIBRIA IN SYSTEM AL-GA-AS-SN AND ELECTRICAL PROPERTIES OF SN-DOPED LIQUID-PHASE EPITAXIAL ALXGA1-XAS [J].
PANISH, MB .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2667-2675
[8]  
Pankove J. I, 1975, OPTICAL PROCESSES SE
[9]   HOW MUCH AL IN ALGAAS-GAAS LASER [J].
RODE, DL .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3887-3891
[10]  
SMITH RA, 1961, SEMICONDUCTORS, P80