CURRENT DEPENDENCE OF SPONTANEOUS CARRIER LIFETIMES IN GAAS-GA1-CHIALCHI AS DOUBLE-HETEROSTRUCTURE LASERS

被引：60

作者：

NAMIZAKI, H ^{[1
]}

KAN, H ^{[1
]}

ISHII, M ^{[1
]}

ITO, A ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 10期

关键词：

D O I：

10.1063/1.1655022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：486 / 487

页数：2

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[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 452 - +
[2] DEPENDENCE OF THRESHOLD AND ELECTRON LIFETIME ON ACCEPTOR CONCENTRATION IN GAAS-GA1-XALXAS LASERS
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DYMENT, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3240 - 3244
[3] MEASUREMENT OF SPONTANEOUS CARRIER LIFETIME FROM STIMULATED EMISSION DELAYS IN SEMICONDUCTOR LASERS
RIPPER, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1762 - +
[4] GAIN-CURRENT RELATION FOR GAAS LASERS WITH N-TYPE AND UNDOPED ACTIVE LAYERS
STERN, F
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 290 - 294
[5] VERY-LOW-CURRENT OPERATION OF MESA-STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE INJECTION LASERS
TSUKADA, T
UMEDA, J
NAKADA, O
CHINONE, N
ITO, R
NAKASHIM.H
NAKAMURA, S
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 344 - &