DEPENDENCE OF THRESHOLD AND ELECTRON LIFETIME ON ACCEPTOR CONCENTRATION IN GAAS-GA1-XALXAS LASERS

被引：72

作者：

HWANG, CJ ^{[1
]}

DYMENT, JC ^{[1
]}

机构：

[1] BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 07期

关键词：

D O I：

10.1063/1.1662740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3240 / 3244

页数：5

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