MEASUREMENT AND INTERPRETATION OF LONG SPONTANEOUS LIFETIMES IN DOUBLE HETEROSTRUCTURE LASERS

被引：46

作者：

DYMENT, JC

LEE, TP

RIPPER, JE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 02期

关键词：

D O I：

10.1063/1.1661138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：452 / +

页数：1

相关论文

共 27 条

[1] ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1103
[2] BASOV NG, 1967, FIZ TVERD TELA+, V8, P2254
[3] GAAS JUNCTION LASERS CONTAINING AMPHOTERIC DOPANTS GE AND SI
BURNHAM, RD
DAPKUS, PD
HOLONYAK, N
KEUNE, DL
ZWICKER, HR
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 199 - &
[4] ELECTROLUMINESCENCE IN AMPNOTERIC SILICON-DOPED GAAS DIODES .2. TRANSIENT RESPONSE
BYER, NE
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1602 - &
[5] ELECTROLUMINESCENCE IN AMPHOTERIC SILICON-DOPED GAAS DIODES .1. STEADY-STATE RESPONSE
BYER, NE
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1597 - &
[6] LONG LIFETIME (LASER) STATES IN PARA-TYPE SI-DOPED GAAS
CRAFORD, MG
HERZOG, AH
HOLONYAK, N
KEUNE, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2648 - &
[7] TEMPERATURE BEHAVIOR OF STIMULATED EMISSION DELAYS IN GAAS DIODES AND A PROPOSED TRAPPING MODEL
DYMENT, JC
RIPPER, JE
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) : 155 - +
[8] HERMITE-GAUSSIAN MODE PATTERNS IN GAAS JUNCTION LASERS
DYMENT, JC
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (03) : 84 - &
[9] CONTINUOUS OPERATION OF GAAS JUNCTION LASERS ON DIAMOND HEAT SINKS AT 200 DEGREES K
DYMENT, JC
DASARO, LA
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (09) : 292 - &
[10] DELAY OF STIMULATED EMISSION IN GAAS LASER DIODES NEAR ROOM TEMPERATURE
FENNER, GE
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 753 - &