SINGLE THIN-ACTIVE-LAYER VISIBLE-SPECTRUM IN1-XGAXP1-ZASZ HETEROSTRUCTURE LASERS

被引：23

作者：

CHIN, R ^{[1
]}

HOLONYAK, N ^{[1
]}

KOLBAS, RM ^{[1
]}

ROSSI, JA ^{[1
]}

KEUNE, DL ^{[1
]}

GROVES, WO ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 04期

关键词：

D O I：

10.1063/1.325062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2551 / 2556

页数：6

共 17 条

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[7] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J].

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[10] LIMITATIONS OF DIRECT-INDIRECT TRANSITION ON IN1-XGAXP1-ZASZ HETEROJUNCTIONS [J].

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