MELT REMOVAL AND PLANAR GROWTH OF IN-1-XGA-XP-1-XAS-Z HETEROJUNCTIONS

[1] ALFEROV ZI, TO BE PUBLISHED

[2] Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746

[3] BOGATOV AP, TO BE PUBLISHED

[4] COLEMAN JJ, 1975, IEEE J QUANTUM ELECT, VQE11, P471, DOI 10.1109/JQE.1975.1068650

[5] HETEROJUNCTION LASER OPERATION OF N-FREE AND N-DOPED GAAS1-YPY (Y=0.42-0.43, LAMBDA-SIMILAR TO 6200 A, 77 DEGREESK) NEAR DIRECT-INDIRECT TRANSITION (Y SIMILAR TO YC APPROXIMATELY EQUAL TO 0.46) [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3556 - 3561

[6] LIQUID-PHASE EPITAXIAL IN 1-XGAXP1-ZASZ/GAAS1-YPY QUATERNARY (LPE)-TERNARY (VPE) HETEROJUNCTION LASERS (X-0.70, Z-0.01, Y-0.40 - LAMBDA LESS-THAN 6300 A,77 DEGREES K) [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 725 - 727

[7] COLEMAN JJ, TO BE PUBLISHED

[8] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 154 - 165

[9] LOW-THRESHOLD LPE IN1-X'GAX'P1-Z'ASZ'-IN1-XGAXP1-ZASZ-IN1-X'GAX'P1-Z'ASZ' YELLOW DOUBLE-HETEROJUNCTION LASER-DIODES (J LESS THAN 104 A-CM2, LAMBDA EQUAL TO 5850 A, 77 DEGREESK) [J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 245 - 247

[10] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 283 - 285

[1] ALFEROV ZI, TO BE PUBLISHED

[2] Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746

[3] BOGATOV AP, TO BE PUBLISHED

[4] COLEMAN JJ, 1975, IEEE J QUANTUM ELECT, VQE11, P471, DOI 10.1109/JQE.1975.1068650

[5] HETEROJUNCTION LASER OPERATION OF N-FREE AND N-DOPED GAAS1-YPY (Y=0.42-0.43, LAMBDA-SIMILAR TO 6200 A, 77 DEGREESK) NEAR DIRECT-INDIRECT TRANSITION (Y SIMILAR TO YC APPROXIMATELY EQUAL TO 0.46) [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3556 - 3561

[6] LIQUID-PHASE EPITAXIAL IN 1-XGAXP1-ZASZ/GAAS1-YPY QUATERNARY (LPE)-TERNARY (VPE) HETEROJUNCTION LASERS (X-0.70, Z-0.01, Y-0.40 - LAMBDA LESS-THAN 6300 A,77 DEGREES K) [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 725 - 727

[7] COLEMAN JJ, TO BE PUBLISHED

[8] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 154 - 165

[9] LOW-THRESHOLD LPE IN1-X'GAX'P1-Z'ASZ'-IN1-XGAXP1-ZASZ-IN1-X'GAX'P1-Z'ASZ' YELLOW DOUBLE-HETEROJUNCTION LASER-DIODES (J LESS THAN 104 A-CM2, LAMBDA EQUAL TO 5850 A, 77 DEGREESK) [J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 245 - 247

[10] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 283 - 285