DETERMINATION OF THE VALENCE-BAND DISCONTINUITY OF INP-IN1-XGAXP1-ZASZ (X-0.13,Z-0.29) BY QUANTUM-WELL LUMINESCENCE

被引：27

作者：

CHIN, R ^{[1
]}

HOLONYAK, N ^{[1
]}

KIRCHOEFER, SW ^{[1
]}

KOLBAS, RM ^{[1
]}

REZEK, EA ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 12期

关键词：

D O I：

10.1063/1.90702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By means of liquid-phase epitaxy, undoped single-quantum-well layers of In1-xGaxP1-zAsz (x∼0.13, z∼0.29) of thickness Lz∼150 Å are grown embedded in InP and are examined in photoluminescence. Hot-electron recombination from E c (InP) to bound holes in the quaternary quantum well leads to stimuated emission in a band ∼80 meV below Eg (InP) and thus to an estimate of ΔEv∼80 meV (ΔEc∼Δ Ev) for the InP-InGaPAs valence-band discontinuity.

引用

页码：862 / 864

页数：3

共 11 条

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