CARRIER COLLECTION IN A SEMICONDUCTOR QUANTUM WELL

被引：100

作者：

SHICHIJO, H

KOLBAS, RM

HOLONYAK, N

DUPUIS, RD

DAPKUS, PD

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] ROCKWELL INT,DIV ELECTR DEVICES,ELECTR RES CTR,ANAHEIM,CA 92803

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 27卷 / 10期

关键词：

D O I：

10.1016/0038-1098(78)91031-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1029 / 1032

页数：4

共 16 条

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[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
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[4] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
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[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468
[5] HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 201 - 203
[6] DETERMINATION OF INDIRECT BAND EDGE OF GAAS BY QUANTUM-WELL BANDFILLING (LZ-100 A)
DUPUIS, RD
DAPKUS, PD
KOLBAS, RM
HOLONYAK, N
[J]. SOLID STATE COMMUNICATIONS, 1978, 27 (05) : 531 - 533
[7] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
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HOLONYAK, N
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CHIN, R
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 295 - 297
[8] CALCULATED ENERGY-DISTRIBUTIONS OF ELECTRONS EMITTED FROM NEGATIVE ELECTRON AFFINITY GAAS-CS-O SURFACES
ESCHER, JS
SCHADE, H
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5309 - 5313
[9] Fermi E, 1950, NUCL PHYS, P187
[10] MECHANISM OF EXCITON-ENHANCED PHOTOELECTRIC EMISSION IN ALKALI HALIDES
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[J]. PHYSICAL REVIEW, 1951, 81 (05): : 702 - 705

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