DETERMINATION OF INDIRECT BAND EDGE OF GAAS BY QUANTUM-WELL BANDFILLING (LZ-100 A)

被引：21

作者：

DUPUIS, RD

DAPKUS, PD

KOLBAS, RM

HOLONYAK, N

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 27卷 / 05期

关键词：

D O I：

10.1016/0038-1098(78)90388-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：531 / 533

页数：3

共 14 条

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CARDONA, M .

PHYSICAL REVIEW B, 1978, 17 (02) :741-751

[2] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].

ASPNES, DE .

PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343

[3] ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS [J].

ASPNES, DE ;

OLSON, CG ;

LYNCH, DW .

PHYSICAL REVIEW LETTERS, 1976, 37 (12) :766-769

[4]

Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[5] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :466-468

[6] HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

YINGLING, RD ;

MOUDY, LA .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :201-203

[7] VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :473-475

[8]

ELLIOTT RJ, 1974, SOLID STATE PHYSICS, P44

[9] WINDOW-HEAT SINK SANDWICH FOR OPTICAL EXPERIMENTS - DIAMOND (OR SAPPHIRE)-SEMICONDUCTOR-INDIUM SANDWICH [J].

HOLONYAK, N ;

SCIFRES, DR .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (12) :1885-&

[10]

HOLONYAK N, UNPUBLISHED

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