ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS

被引：114

作者：

ASPNES, DE

OLSON, CG

LYNCH, DW

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

[2] IOWA STATE UNIV, DEPT PHYS, AMES, IA 50010 USA

[3] ELECTR RESOURCES DEV AGCY, AMES LAB, AMES, IA 50010 USA

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 37卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.37.766

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：766 / 769

页数：4

相关论文

共 32 条

[1] ELECTROREFLECTANCE OF GAP TO 27 EV
ASPNES, DE
OLSON, CG
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (27) : 1605 - 1607
[2] ELECTROREFLECTANCE OF GAAS AND GAP TO 27 EV USING SYNCHROTRON RADIATION
ASPNES, DE
OLSON, CG
LYNCH, DW
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2527 - 2538
[3] LINEARIZED THIRD-DERIVATIVE SPECTROSCOPY WITH DEPLETION-BARRIER MODULATION
ASPNES, DE
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (14) : 913 - &
[4] MODULATION SPECTROSCOPY AT NON-NORMAL INCIDENCE WITH EMPHASIS ON VACUUM-UV SPECTRAL REGION
ASPNES, DE
OLSON, CG
LYNCH, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 602 - 607
[5] ASPNES DE, TO BE PUBLISHED
[6] ASPNES DE, 1976, 13TH P INT C PHYS SE
[7] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS
ASPNNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW B, 1973, 7 (10): : 4605 - 4652
[8] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE
BALSLEV, I
[J]. PHYSICAL REVIEW, 1968, 173 (03): : 762 - &
[9] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GAAS AT HIGH-TEMPERATURES
BLOOD, P
[J]. PHYSICAL REVIEW B, 1972, 6 (06): : 2257 - &
[10] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582

← 1 2 3 4 →