共 18 条
- [1] AUKERMAN LW, 1960, J APPL PHYS, V31, P293
- [2] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &
- [3] BALSLEV I, 1966, J PHYS SOC JPN, VS 21, P101
- [4] ENERGY BAND STRUCTURE OF GALLIUM ANTIMONIDE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2094 - &
- [5] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +
- [6] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +
- [7] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963
- [9] HERMAN F, 1967, 2 6 SEMICONDUCTING C, P503
- [10] EFFECTS OF HIGH PRESSURE UNIAXIAL STRESS AND TEMPERATURE ON ELECTRICAL RESISTIVITY OF N-GAAS [J]. PHYSICAL REVIEW, 1967, 155 (03): : 786 - &