INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM

被引：399

作者：

BALSLEV, I

机构：

来源：

PHYSICAL REVIEW | 1966年 / 143卷 / 02期

关键词：

D O I：

10.1103/PhysRev.143.636

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：636 / &

共 39 条

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[2] PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON
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HENNINGSEN, T
KOENIG, SH
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[3] ON INTERPRETATION OF OBSERVED HOLE MASS SHIFT WITH UNIAXIAL STRESS IN SILICON
BALSLEV, I
LAWAETZ, P
[J]. PHYSICS LETTERS, 1965, 19 (01): : 6 - &
[4] THE INFLUENCE OF HIGH UNIAXIAL STRESS ON THE INDIRECT ABSORPTION EDGE IN SILICON
Balslev, I.
[J]. SOLID STATE COMMUNICATIONS, 1965, 3 (08) : 213 - 218
[5] BIR GL, 1965, 7 P INT C PHYS SEM, P529
[6] BRECKENRIDGE RG, 1956, PHOTOCONDUCTIVITY ED, P184
[7] HIGH-STRESS PIEZORESISTANCE AND MOBILITY IN DEGENERATE SB-DOPED GERMANIUM
CUEVAS, M
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[J]. PHYSICAL REVIEW, 1965, 137 (6A): : 1847 - &
[8] DAKHOVSKII IV, 1964, SOV PHYS-SOL STATE, V5, P1695
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