THE INFLUENCE OF HIGH UNIAXIAL STRESS ON THE INDIRECT ABSORPTION EDGE IN SILICON

被引：12

作者：

Balslev, I. ^{[1
]}

机构：

[1] Tech Univ Denmark, Dept Phys, DK-2800 Lyngby, Denmark

来源：

SOLID STATE COMMUNICATIONS | 1965年 / 3卷 / 08期

关键词：

D O I：

10.1016/0038-1098(65)90294-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The indirect absorption edge in uniaxially strained Si single crystals has been studied at the temperature 77 degrees K. Examining the induced changes in the 1.21 eV threshold in the absorption coefficient we observed a splitting from which the various deformation potentials associated with the valence and conduction bands could be determined. The resulting values were Xi(u) = 8.5 +/- 0.2 eV, b = -2.2 +/- 0.2 eV, d = -6.2 +/- 0.4 eV, and Xi + 1/3 Xi(d) -a = 4.2 +/- 0.5 eV.

引用

页码：213 / 218

页数：6

共 12 条

[1] PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON
AUBREY, JE
GUBLER, W
HENNINGSEN, T
KOENIG, SH
[J]. PHYSICAL REVIEW, 1963, 130 (05): : 1667 - +
[2] BIR GL, 1964, P 7 INT C PHYS SEM P
[3] HIGH-STRESS PIEZORESISTANCE AND MOBILITY IN DEGENERATE SB-DOPED GERMANIUM
CUEVAS, M
FRITZSCH.H
[J]. PHYSICAL REVIEW, 1965, 137 (6A): : 1847 - &
[4] THEORY OF CYCLOTRON RESONANCE IN STRAINED SILICON CRYSTALS
HASEGAWA, H
[J]. PHYSICAL REVIEW, 1963, 129 (03): : 1029 - &
[5] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS
HENSEL, JC
FEHER, G
[J]. PHYSICAL REVIEW, 1963, 129 (03): : 1041 - &
[6] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING
HERRING, C
VOGT, E
[J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961
[7] HERRING C, 1957, PHYS REV, V105, P1933, DOI 10.1103/PhysRev.105.1933
[8] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF GE
MACFARLANE, GG
MCLEAN, TP
QUARRINGTON, JE
ROBERTS, V
[J]. PHYSICAL REVIEW, 1957, 108 (06): : 1377 - 1383
[9] MACSKIMIN HJ, 1953, J APPL PHYS, V24, P988
[10] PIKUS GE, 1959, SOV PHYS-SOL STATE, V1, P136

← 1 2 →