CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS

被引：410

作者：

HENSEL, JC

FEHER, G

机构：

来源：

PHYSICAL REVIEW | 1963年 / 129卷 / 03期

关键词：

D O I：

10.1103/PhysRev.129.1041

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1041 / &

共 41 条

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[2] CYCLOTRON RESONANCE EXPERIMENTS IN SILICON AND GERMANIUM
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ZEIGER, HJ
LAX, B
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[3] DINGLE R, UNPUBLISHED
[4] SOME MAGNETIC PROPERTIES OF METALS .3. DIAMAGNETIC RESONANCE
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[5] DINGLE RB, 1951, P INT C VERY LOW TEM, P165
[6] DORFMAN JG, 1951, DOKL AKAD NAUK SSSR, V81, P765
[7] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS
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KIP, AF
KITTEL, C
[J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384
[8] PARAMAGNETIC RESONANCE ABSORPTION FROM ACCEPTORS IN SILICON
FEHER, G
HENSEL, JC
GERE, EA
[J]. PHYSICAL REVIEW LETTERS, 1960, 5 (07) : 309 - 311
[9] SENSITIVITY CONSIDERATIONS IN MICROWAVE PARAMAGNETIC RESONANCE ABSORPTION TECHNIQUES
FEHER, G
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1957, 36 (02): : 449 - 484
[10] OBSERVATION OF QUANTUM EFFECTS IN CYCLOTRON RESONANCE
FLETCHER, RC
YAGER, WA
MERRITT, FR
[J]. PHYSICAL REVIEW, 1955, 100 (02): : 747 - 748