GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES

被引：412

作者：

ASPNES, DE ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.14.5331

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：5331 / 5343

页数：13

相关论文

共 75 条

[1] ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS
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[8] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE
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[9] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GAAS AT HIGH-TEMPERATURES
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[10] TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS
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