TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS

被引：109

作者：

CAMASSEL, J

AUVERGNE, D

机构：

[1] UNIV SCI & TECH LANGUEDOC,CTR ETUDE ELECTR SOLIDES,34060 MONTPELLIER,FRANCE

[2] UNIV CALIF,LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.12.3258

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3258 / 3267

页数：10

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