QUANTUM-WELL HETEROSTRUCTURE LASERS

[31] WINDOW-HEAT SINK SANDWICH FOR OPTICAL EXPERIMENTS - DIAMOND (OR SAPPHIRE)-SEMICONDUCTOR-INDIUM SANDWICH [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (12) : 1885 - &

[32] BEVEL CROSS SECTIONING OF ULTRATHIN (- 100 A) III-V-SEMICONDUCTOR LAYERS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (04) : 431 - &

[33] LOW-THRESHOLD CONTINUOUS LASER OPERATION (300-337-DEGREES-K) OF MULTILAYER MO-CVD ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 737 - 739

[34] ROOM-TEMPERATURE CONTINUOUS OPERATION OF PHOTOPUMPED MO-CVD ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL LASERS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 73 - 75

[35] BANDFILLING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5392 - 5397

[36] HOLONYAK N, 1980, J APPL PHYS, V51

[37] HOLONYAK N, 1978, GALLIUM ARSENIDE REL, P387

[38] TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS [J]. PHYSICAL REVIEW, 1969, 183 (03): : 740 - &

[39] Kolbas R. M., 1978, Soviet Technical Physics Letters, V4, P28

[40] PHONON-ASSISTED RECOMBINATION AND STIMULATED-EMISSION IN MULTIPLE QUANTUM-WELL MO-CVD ALXGA1-XAS-GAAS HETEROSTRUCTURES (LZ-APPROXIMATELY-50A, E1-1'-2XHBAROMEGALO APPROXIMATELY-LESS-THAN HBAR OMEGA LESS-THAN-EL) [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (12) : 1033 - 1037

[31] WINDOW-HEAT SINK SANDWICH FOR OPTICAL EXPERIMENTS - DIAMOND (OR SAPPHIRE)-SEMICONDUCTOR-INDIUM SANDWICH [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (12) : 1885 - &

[32] BEVEL CROSS SECTIONING OF ULTRATHIN (- 100 A) III-V-SEMICONDUCTOR LAYERS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (04) : 431 - &

[33] LOW-THRESHOLD CONTINUOUS LASER OPERATION (300-337-DEGREES-K) OF MULTILAYER MO-CVD ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 737 - 739

[34] ROOM-TEMPERATURE CONTINUOUS OPERATION OF PHOTOPUMPED MO-CVD ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL LASERS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 73 - 75

[35] BANDFILLING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5392 - 5397

[36] HOLONYAK N, 1980, J APPL PHYS, V51

[37] HOLONYAK N, 1978, GALLIUM ARSENIDE REL, P387

[38] TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS [J]. PHYSICAL REVIEW, 1969, 183 (03): : 740 - &

[39] Kolbas R. M., 1978, Soviet Technical Physics Letters, V4, P28

[40] PHONON-ASSISTED RECOMBINATION AND STIMULATED-EMISSION IN MULTIPLE QUANTUM-WELL MO-CVD ALXGA1-XAS-GAAS HETEROSTRUCTURES (LZ-APPROXIMATELY-50A, E1-1'-2XHBAROMEGALO APPROXIMATELY-LESS-THAN HBAR OMEGA LESS-THAN-EL) [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (12) : 1033 - 1037