BANDFILLING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS

[1] ADAMS MJ, 1969, GALLIUM ARSENIDE LAS, P52

[2] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J]. PHYSICAL REVIEW B, 1976, 14 (12) : 5331 - 5343

[3] BLAKEMORE JS, 1962, SEMICONDUCTOR STAT, P78

[4] SINGLE THIN-ACTIVE-LAYER VISIBLE-SPECTRUM IN1-XGAXP1-ZASZ HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2551 - 2556

[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

[7] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[8] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468

[9] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 839 - 841

[10] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 295 - 297

[1] ADAMS MJ, 1969, GALLIUM ARSENIDE LAS, P52

[2] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J]. PHYSICAL REVIEW B, 1976, 14 (12) : 5331 - 5343

[3] BLAKEMORE JS, 1962, SEMICONDUCTOR STAT, P78

[4] SINGLE THIN-ACTIVE-LAYER VISIBLE-SPECTRUM IN1-XGAXP1-ZASZ HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2551 - 2556

[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

[7] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[8] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468

[9] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 839 - 841

[10] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 295 - 297