CW ROOM-TEMPERATURE VISIBLE SINGLE QUANTUM WELL GA0.73AL0.27AS DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：10

作者：

BURNHAM, RD

SCIFRES, DR

STREIFER, W

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 12期

关键词：

D O I：

10.1049/el:19820345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：507 / 509

页数：3

相关论文

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[1] CURRENT THRESHOLD UNIFORMITY OF SHALLOW PROTON STRIPE GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION
BURNHAM, RD
SCIFRES, DR
STREIFER, W
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 118 - 119
[2] DUPUIS RD, 1979, I PHYS C SER, V45, P1
[3] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186
[4] Ladany I., 1976, International Electron Devices Meeting. (Technical digest), P129
[5] PROTON-ISOLATED NARROW STRIPE VISIBLE LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
MORI, Y
SATO, H
IKEDA, M
MATSUDA, O
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 293 - 295
[6] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 217 - 219
[7] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 786 - 788