CURRENT THRESHOLD UNIFORMITY OF SHALLOW PROTON STRIPE GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION

被引:22
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BURNHAM, RD
SCIFRES, DR
STREIFER, W
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10.1063/1.93007
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O59 [应用物理学];
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页码:118 / 119
页数:2
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共 7 条
[1]   LOW-CURRENT PROTON-BOMBARDED (GAAL)AS DOUBLE-HETEROSTRUCTURE LASERS [J].
BOULEY, JC ;
DELPECH, P ;
CHARIL, J ;
CHAMINANT, G ;
LANDREAU, J ;
NOBLANC, JP .
APPLIED PHYSICS LETTERS, 1978, 33 (04) :327-330
[2]  
BURNHAM RD, UNPUB ELECTRON LETT
[3]   (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS - COMPARISON OF DEVICES FABRICATED WITH DEEP AND SHALLOW PROTON-BOMBARDMENT [J].
DIXON, RW ;
JOYCE, WB .
BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (06) :975-985
[4]  
DUPUIS RD, 1979, I PHYS C SER, V45, P1
[5]  
SCIFRES DR, 1981, IEEE JQE, V17
[6]   THE HIGH-TEMPERATURE (55-DEGREES-C-70-DEGREES-C) DEVICE CHARACTERISTICS OF CW (AIGA)AS DOUBLE-HETEROSTRUCTURE PROTON-BOMBARDED STRIPE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
TSANG, WT ;
HOLBROOK, WR ;
FRALEY, PE .
APPLIED PHYSICS LETTERS, 1981, 38 (01) :6-9
[7]   OHMIC CONTACTS TO NORMAL-GAAS USING LOW-TEMPERATURE ANNEAL [J].
WERTHEN, JG ;
SCIFRES, DR .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1127-1129