OHMIC CONTACTS TO NORMAL-GAAS USING LOW-TEMPERATURE ANNEAL

被引：27

作者：

WERTHEN, JG ^{[1
]}

SCIFRES, DR ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

关键词：

D O I：

10.1063/1.328842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1127 / 1129

页数：3

共 12 条

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[2] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS
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SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &
[3] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS
CHRISTOU, A
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 141 - &
[4] Cox R. H., 1969, Ohmic contacts to semiconductors, P88
[5] OHMIC CONTACTS FOR GAAS DEVICES
COX, RH
STRACK, H
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +
[6] DYMENT JC, 1973, J APPL PHYS, V44, P1
[7] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS
HEIME, K
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[J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 835 - &
[8] MACKSEY HM, 1976, I PHYSICS C SERIES, V33, P254
[9] OGAWA M, 1980, J APPL PHYS, V51, P1
[10] PRUNIAUX BR, 1971, J APPL PHYS, V42, P9