SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS

[1] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[2] CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 727 - +

[3] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 89 - &

[4] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &

[5] ELECTRON-OPTICAL-PHONON SCATTERING IN EMITTER AND COLLECTOR BARRIERS OF SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 979 - &

[6] RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1969, 12 (01) : 55 - &

[7] NEUBERGER M, 1969, BIBLIOGRAPHY SUPPLEM

[8] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &

[9] Schwartz B., 1969, OHMIC CONTACTS SEMIC

[10] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P): : 263 - &

[1] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[2] CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 727 - +

[3] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 89 - &

[4] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &

[5] ELECTRON-OPTICAL-PHONON SCATTERING IN EMITTER AND COLLECTOR BARRIERS OF SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 979 - &

[6] RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1969, 12 (01) : 55 - &

[7] NEUBERGER M, 1969, BIBLIOGRAPHY SUPPLEM

[8] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &

[9] Schwartz B., 1969, OHMIC CONTACTS SEMIC

[10] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P): : 263 - &