EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON

[1] COMPLEX LONGITUDINAL MAGNETOCONDUCTIVITY OF N-TYPE SILICON AT 24 GC/SEC [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 911 - +

[2] BAGGULEY DMS, 1961, P ROY SOC LONDON, VA262, P365

[3] ON INTERPRETATION OF OBSERVED HOLE MASS SHIFT WITH UNIAXIAL STRESS IN SILICON [J]. PHYSICS LETTERS, 1965, 19 (01): : 6 - &

[4] LATTICE CONSTANTS + THERMAL EXPANSIVITIES OF SILICON + OF CALCIUM FLUORIDE BETWEEN 6 DEGREES + 322 DEGREES K [J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (08) : 2324 - &

[5] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &

[6] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[7] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[8] DIRECT OBSERVATION OF PHONONS IN SILICON BY ELECTRIC-FIELD-MODULATED OPTICAL ABSORPTION [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (06) : 178 - &

[9] MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIINS BY INFRARED PLASMA REFLECTION [J]. APPLIED PHYSICS LETTERS, 1966, 9 (12) : 432 - &

[10] DIE MAGNETISCHE SUSZEPTIBILITAT UND EFFEKTIVE MASSE DER LADUNGSTRAGER IN SILIZIUM UND GERMANIUM [J]. NATURWISSENSCHAFTEN, 1958, 45 (02) : 33 - 34

[1] COMPLEX LONGITUDINAL MAGNETOCONDUCTIVITY OF N-TYPE SILICON AT 24 GC/SEC [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 911 - +

[2] BAGGULEY DMS, 1961, P ROY SOC LONDON, VA262, P365

[3] ON INTERPRETATION OF OBSERVED HOLE MASS SHIFT WITH UNIAXIAL STRESS IN SILICON [J]. PHYSICS LETTERS, 1965, 19 (01): : 6 - &

[4] LATTICE CONSTANTS + THERMAL EXPANSIVITIES OF SILICON + OF CALCIUM FLUORIDE BETWEEN 6 DEGREES + 322 DEGREES K [J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (08) : 2324 - &

[5] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &

[6] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[7] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[8] DIRECT OBSERVATION OF PHONONS IN SILICON BY ELECTRIC-FIELD-MODULATED OPTICAL ABSORPTION [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (06) : 178 - &

[9] MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIINS BY INFRARED PLASMA REFLECTION [J]. APPLIED PHYSICS LETTERS, 1966, 9 (12) : 432 - &

[10] DIE MAGNETISCHE SUSZEPTIBILITAT UND EFFEKTIVE MASSE DER LADUNGSTRAGER IN SILIZIUM UND GERMANIUM [J]. NATURWISSENSCHAFTEN, 1958, 45 (02) : 33 - 34