DIRECT OBSERVATION OF PHONONS IN SILICON BY ELECTRIC-FIELD-MODULATED OPTICAL ABSORPTION

被引：75

作者：

FROVA, A

HANDLER, P

机构：

来源：

PHYSICAL REVIEW LETTERS | 1965年 / 14卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.14.178

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：178 / &

共 16 条

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[5]

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[6] SHIFT OF OPTICAL ABSORPTION EDGE BY ELECTRIC FIELD - MODULATION OF LIGHT IN SPACE-CHARGE REGION OF GE P-N JUNCTION ( 90 PERCENT MODULATION AT LAMBDA - 1.56 MU E ) [J].

FROVA, A ;

HANDLER, P .

APPLIED PHYSICS LETTERS, 1964, 5 (01) :11-&

[7]

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[8]

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[9] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].

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PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363

[10]

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