EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON

[11] GIBSON AF, 1963, SEMICONDUCTORS, P171

[12] ANALYSIS OF INTRINSIC RECOMBINATION RADIATION FROM SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 392 - 396

[13] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &

[14] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1041 - &

[15] HERLET A, 1957, Z ANGEW PHYS, V9, P155

[16] DETERMINATION OF FREE ELECTRON EFFECTIVE MASS OF N-TYPE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 236 - &

[17] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[18] SPECIFIC HEAT OF GERMANIUM AND SILICON AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1959, 113 (01): : 33 - 39

[19] STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1650 - 1657

[20] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J]. PHYSICAL REVIEW, 1958, 111 (05): : 1245 - 1254

[11] GIBSON AF, 1963, SEMICONDUCTORS, P171

[12] ANALYSIS OF INTRINSIC RECOMBINATION RADIATION FROM SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 392 - 396

[13] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &

[14] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1041 - &

[15] HERLET A, 1957, Z ANGEW PHYS, V9, P155

[16] DETERMINATION OF FREE ELECTRON EFFECTIVE MASS OF N-TYPE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 236 - &

[17] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[18] SPECIFIC HEAT OF GERMANIUM AND SILICON AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1959, 113 (01): : 33 - 39

[19] STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1650 - 1657

[20] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J]. PHYSICAL REVIEW, 1958, 111 (05): : 1245 - 1254