ELECTRON-OPTICAL-PHONON SCATTERING IN EMITTER AND COLLECTOR BARRIERS OF SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES

被引：58

作者：

CROWELL, CR

SZE, SM

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(65)90164-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：979 / &

共 15 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[2] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON
BARTELINK, D
MOLL, JL
MEYER, NI
[J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +
[3] CHYNOWETH AG, PRIVATE COMMUNICATIO
[4] CONWELL EM, 1964, PHYS REV, V135, P1138
[5] ELECTRON-PHONON COLLECTOR BACKSCATTERING IN HOT ELECTRON TRANSISTORS
CROWELL, CR
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 673 - &
[6] CROWELL CR, 1965, IEEE SOLID STATE DEV
[7] CROWELL CR, TO BE PUBLISHED
[8] GARNACHE RR, 1964, ELECTRONIC COMPONENT
[9] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
HERRING, C
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290
[10] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON
LEE, CA
KLEIMACK, JJ
BATDORF, RL
WIEGMANN, W
LOGAN, RA
[J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +