PROTON-ISOLATED NARROW STRIPE VISIBLE LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：10

作者：

MORI, Y

SATO, H

IKEDA, M

MATSUDA, O

KANEKO, K

WATANABE, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 04期

关键词：

D O I：

10.1063/1.93081

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：293 / 295

页数：3

共 9 条

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ASBECK, PM ;

CAMMACK, DA ;

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KLEBANOFF, V .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :727-733

[2] NON-GAUSSIAN FUNDAMENTAL MODE PATTERNS IN NARROW-STRIPE-GEOMETRY LASERS [J].

ASBECK, PM ;

CAMMACK, DA ;

DANIELE, JJ .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :504-506

[3] IMPROVED LIGHT-OUTPUT LINEARITY IN STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE (AL,GA)AS LASERS [J].

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NASH, FR ;

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HEPPLEWHITE, RT .

APPLIED PHYSICS LETTERS, 1976, 29 (06) :372-374

[4]

KIRKBY PA, 1980, MICROELECTRON RELIAB, V19, P633

[5] LASING CHARACTERISTICS OF VERY NARROW PLANAR STRIPE LASERS [J].

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KAWAGUCHI, H ;

FURUKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) :601-607

[6] ALGAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR VISIBLE LASER [J].

MORI, Y ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2792-2798

[7] LASING CHARACTERISTICS OF GAINASP-INP NARROW PLANAR STRIPE LASERS [J].

OE, K ;

ANDO, S ;

SUGIYAMA, K .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3541-3544

[8]

SCIFRES DR, 1981, 152 C LAS EL OPT

[9] GROWTH OF HIGH-QUALITY ALXGAL-XAS BY OMVPE FOR LASER DEVICES [J].

WAGNER, EE ;

HOM, G ;

STRINGFELLOW, GB .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :239-253

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