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ALGAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR VISIBLE LASER
被引:50
作者
:
MORI, Y
论文数:
0
引用数:
0
h-index:
0
MORI, Y
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
WATANABE, N
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1981年
/ 52卷
/ 04期
关键词
:
D O I
:
10.1063/1.329007
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2792 / 2798
页数:7
相关论文
共 11 条
[1]
AYABE M, 1981, JPN J APPL PHYS, V20, P155
[2]
SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals and Radar Establishment, Hertforshire, England, Baldock
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1979,
47
(5-6)
: 613
-
618
[3]
BASS SJ, 1977, 336 I PHYS C SER
[4]
ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(07)
: 466
-
468
[5]
SINGLE-LONGITUDINAL-MODE CW ROOM-TEMPERATURE GA1-XALXAS-GAAS CHANNEL-GUIDE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(08)
: 724
-
726
[6]
GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(12)
: 839
-
841
[7]
ELECTRON-MOBILITY IN ALXGA1-XAS
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(06)
: 4178
-
4183
[8]
ELECTRON-MOBILITY IN COMPENSATED GAAS AND ALXGA1-XAS
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
STRINGFELLOW, GB
KUNZEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
KUNZEL, H
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(06)
: 3254
-
3261
[9]
INCREASE IN LUMINESCENCE EFFICIENCY OF ALXGA1-XAS GROWN BY ORGANOMETALLIC VPE
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,PALO ALTO,CA 94304
HEWLETT PACKARD CO,PALO ALTO,CA 94304
STRINGFELLOW, GB
HOM, G
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,PALO ALTO,CA 94304
HEWLETT PACKARD CO,PALO ALTO,CA 94304
HOM, G
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(11)
: 794
-
796
[10]
METALORGANIC CVD GROWTH OF GAAS-GAAIAS DOUBLE HETEROJUNCTION LASERS HAVING LOW INTERFACIAL RECOMBINATION AND LOW THRESHOLD CURRENT
THRUSH, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Limited, Harlow, Essex CM 17 9 NA, London Road
THRUSH, EJ
SELWAY, PR
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Limited, Harlow, Essex CM 17 9 NA, London Road
SELWAY, PR
HENSHALL, GD
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Limited, Harlow, Essex CM 17 9 NA, London Road
HENSHALL, GD
[J].
ELECTRONICS LETTERS,
1979,
15
(05)
: 156
-
158
←
1
2
→
共 11 条
[1]
AYABE M, 1981, JPN J APPL PHYS, V20, P155
[2]
SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals and Radar Establishment, Hertforshire, England, Baldock
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1979,
47
(5-6)
: 613
-
618
[3]
BASS SJ, 1977, 336 I PHYS C SER
[4]
ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(07)
: 466
-
468
[5]
SINGLE-LONGITUDINAL-MODE CW ROOM-TEMPERATURE GA1-XALXAS-GAAS CHANNEL-GUIDE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(08)
: 724
-
726
[6]
GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(12)
: 839
-
841
[7]
ELECTRON-MOBILITY IN ALXGA1-XAS
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(06)
: 4178
-
4183
[8]
ELECTRON-MOBILITY IN COMPENSATED GAAS AND ALXGA1-XAS
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
STRINGFELLOW, GB
KUNZEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
KUNZEL, H
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(06)
: 3254
-
3261
[9]
INCREASE IN LUMINESCENCE EFFICIENCY OF ALXGA1-XAS GROWN BY ORGANOMETALLIC VPE
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,PALO ALTO,CA 94304
HEWLETT PACKARD CO,PALO ALTO,CA 94304
STRINGFELLOW, GB
HOM, G
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,PALO ALTO,CA 94304
HEWLETT PACKARD CO,PALO ALTO,CA 94304
HOM, G
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(11)
: 794
-
796
[10]
METALORGANIC CVD GROWTH OF GAAS-GAAIAS DOUBLE HETEROJUNCTION LASERS HAVING LOW INTERFACIAL RECOMBINATION AND LOW THRESHOLD CURRENT
THRUSH, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Limited, Harlow, Essex CM 17 9 NA, London Road
THRUSH, EJ
SELWAY, PR
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Limited, Harlow, Essex CM 17 9 NA, London Road
SELWAY, PR
HENSHALL, GD
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Limited, Harlow, Essex CM 17 9 NA, London Road
HENSHALL, GD
[J].
ELECTRONICS LETTERS,
1979,
15
(05)
: 156
-
158
←
1
2
→