SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD

The doping of gallium arsenide with silicon has been studied as a function of temperature and of the concentration of silane, arsine, trimethylgallium and oxygen. Silicon is always a donor and its incorporation is controlled by kinetic and not thermodynamic factors. A strong surface adsorption of silicon has been found and used to produce very sharp doping spikes. Germanium is incorporated as a donor and its concentration is controlled mainly by the rate of arrival of germane at the growing surface. © 1979.