GROWTH OF EPITAXIAL GAAS STRUCTURES FOR HIGH-EFFICIENCY IMPATTS

[1] Carslaw H.S., 1959, CONDUCTION HEAT SOLI, P50

[2] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +

[3] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1823 - +

[4] DILORENZO JV, 1974, 5TH P INT S GAAS REL

[5] GOLDSMITH N, 1963, RCA REV, V24, P546

[6] HIRSCHFELDER JO, 1954, MOLECULAR THEORY GAS

[7] HOWER PL, 1971, SEMICONDUCTORS SEMIM, V7, P167

[8] IRVIN JC, 1973, 4TH P BIENN CORN EL, P287

[9] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 965 - &

[10] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) : 399 - +

[1] Carslaw H.S., 1959, CONDUCTION HEAT SOLI, P50

[2] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +

[3] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1823 - +

[4] DILORENZO JV, 1974, 5TH P INT S GAAS REL

[5] GOLDSMITH N, 1963, RCA REV, V24, P546

[6] HIRSCHFELDER JO, 1954, MOLECULAR THEORY GAS

[7] HOWER PL, 1971, SEMICONDUCTORS SEMIM, V7, P167

[8] IRVIN JC, 1973, 4TH P BIENN CORN EL, P287

[9] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 965 - &

[10] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) : 399 - +