HETEROEPITAXIAL GAAS ON ALUMINUM-OXIDE - FORMATION AND ELECTRICAL PROPERTIES OF ZN-DOPED AND CD-DOPED FILMS

被引：34

作者：

MANASEVIT, HM

THORSEN, AC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 01期

关键词：

D O I：

10.1149/1.2404145

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：99 / +

页数：1

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[2] QUANTUM YIELD OF GAAS SEMITRANSPARENT PHOTOCATHODE
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[3] HETEROEPITAXIAL GAAS ON ALUMINUM OXIDE .1. EARLY GROWTH STUDIES
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[4] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS
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[6] HETEROEPITAXIAL GAAS ON ALUMINUM OXIDE - ELECTRICAL PROPERTIES OF UNDOPED FILMS
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