QUANTUM YIELD OF GAAS SEMITRANSPARENT PHOTOCATHODE

被引:84
作者
LIU, YZ
MOLL, JL
SPICER, WE
机构
关键词
D O I
10.1063/1.1653309
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:60 / &
相关论文
共 5 条
[1]   ABSORPTION EDGE IN DEGENERATE PARA TYPE GAAS [J].
KUDMAN, I ;
SEIDEL, T .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (03) :771-&
[2]   EFFECTS OF HEAT CLEANING ON PHOTOEMISSION PROPERTIES OF GAAS SURFACES [J].
LIU, YZ ;
MOLL, JL ;
SPICER, WE .
APPLIED PHYSICS LETTERS, 1969, 14 (09) :275-&
[3]   SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J].
MANASEVIT, HM .
APPLIED PHYSICS LETTERS, 1968, 12 (04) :156-+
[4]  
MANASEVIT HM, DAAK0269C0333 CONTR
[5]  
1969, 1 FORT BELV QUART PR