HETEROEPITAXIAL GAAS ON ALUMINUM OXIDE .1. EARLY GROWTH STUDIES

[1] ELECTRICAL MEASUREMENTS + X-RAY LATTICE PARAMETER MEASUREMENTS OF GAAS DOPED WITH SE TE ZN + CD + STRESS EFFECTS OF THESE ELEMENTS AS DIFFUSANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2462 - &

[2] PRECISION THERMAL EXPANSION MEASUREMENTS OF SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4870 - &

[3] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +

[4] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 156 - +

[5] PINSKER ZG, 1953, ELECTRON DIFFRACTION, P106

[6] REID FJ, 1968, OCT P S GALL ARS DAL, P59

[7] 1963, AM I PHYSICS HANDBOO, P4

[1] ELECTRICAL MEASUREMENTS + X-RAY LATTICE PARAMETER MEASUREMENTS OF GAAS DOPED WITH SE TE ZN + CD + STRESS EFFECTS OF THESE ELEMENTS AS DIFFUSANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2462 - &

[2] PRECISION THERMAL EXPANSION MEASUREMENTS OF SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4870 - &

[3] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +

[4] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 156 - +

[5] PINSKER ZG, 1953, ELECTRON DIFFRACTION, P106

[6] REID FJ, 1968, OCT P S GALL ARS DAL, P59

[7] 1963, AM I PHYSICS HANDBOO, P4