ELECTRICAL MEASUREMENTS + X-RAY LATTICE PARAMETER MEASUREMENTS OF GAAS DOPED WITH SE TE ZN + CD + STRESS EFFECTS OF THESE ELEMENTS AS DIFFUSANTS IN GAAS

被引：38

作者：

BLACK, J

LUBLIN, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 08期

关键词：

D O I：

10.1063/1.1702882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2462 / &

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[10] CHANGES IN ELECTRON CONCENTRATION OF DONOR-DOPED GAAS CRYSTALS CAUSED BY ANNEALING
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