RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K

被引：668

作者：

SZE, SM

IRVIN, JC

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(68)90012-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：599 / &

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