GROWTH OF SEMI-INSULATING EPITAXIAL GALLIUM-ARSENIDE BY CHROMIUM DOPING IN METAL-ALKYL+HYDRIDE SYSTEM

被引：46

作者：

BASS, SJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 44卷 / 01期

关键词：

D O I：

10.1016/0022-0248(78)90324-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：29 / 33

页数：5

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共 13 条

[1] AMBRIDGE T, 1974, GALLIUM ARSENIDE REL, P320
[2] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE
BASS, SJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178
[3] BASS SJ, GALLIUM ARSENIDE REL, P1
[4] MODIFIED ENTRAINMENT METHOD FOR MEASURING VAPOR-PRESSURES AND HETEROGENEOUS EQUILIBRIUM-CONSTANTS .1. THEORY, AND VALIDATION OF METHOD USING WATER AND LEAD
BATTAT, D
FAKTOR, MM
GARRETT, I
MOSS, RH
[J]. JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1974, 70 : 2267 - 2279
[5] COX HM, 1976, GALLIUM ARSENIDE REL, P11
[6] CROSSLEY I, 1976, GALLIUM ARSENIDE REL, P289
[7] MODEL RELATING ELECTRICAL-PROPERTIES AND IMPURITY CONCENTRATIONS IN SEMI-INSULATING GAAS
LINDQUIST, PF
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1262 - 1267
[8] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS
MANASEVIT, HM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +
[9] EPITAXIAL GALLIUM ARSENIDE FROM TRIMETHYL GALLIUM AND ARSINE
RAICHOUDBURY, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1745 - +
[10] SAVA MA, 1976, J ELECTROCHEM SOC, V123, P1498