GROWTH OF HIGH-QUALITY ALXGAL-XAS BY OMVPE FOR LASER DEVICES

[1] BASS SJ, 1977, 33B I PHYS C SER, P1

[2] TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 304 - 306

[3] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 406 - 407

[4] CONTINUOUS 300-DEGREES-K LASER OPERATION OF SINGLE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE DIODES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 265 - 267

[5] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &

[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[7] GROWTH OF EPITAXIAL GAAS STRUCTURES FOR HIGH-EFFICIENCY IMPATTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) : 760 - 769

[8] ORGANO-METALLIC-SOURCED VPE ALGAAS-GAAS CONCENTRATOR SOLAR-CELLS HAVING CONVERSION EFFICIENCIES OF 19-PERCENT [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 26 - 27

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF NI-DIFFUSED AND ZN-DIFFUSED VAPOR-PHASE EPITAXY N-GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6845 - 6859

[10] PROPERTIES OF EPITAXIAL GAAS LAYERS FROM A TRIETHYL GALLIUM AND ARSINE SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : 1108 - 1112

[1] BASS SJ, 1977, 33B I PHYS C SER, P1

[2] TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 304 - 306

[3] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 406 - 407

[4] CONTINUOUS 300-DEGREES-K LASER OPERATION OF SINGLE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE DIODES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 265 - 267

[5] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &

[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[7] GROWTH OF EPITAXIAL GAAS STRUCTURES FOR HIGH-EFFICIENCY IMPATTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) : 760 - 769

[8] ORGANO-METALLIC-SOURCED VPE ALGAAS-GAAS CONCENTRATOR SOLAR-CELLS HAVING CONVERSION EFFICIENCIES OF 19-PERCENT [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 26 - 27

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF NI-DIFFUSED AND ZN-DIFFUSED VAPOR-PHASE EPITAXY N-GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6845 - 6859

[10] PROPERTIES OF EPITAXIAL GAAS LAYERS FROM A TRIETHYL GALLIUM AND ARSINE SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : 1108 - 1112