PROPERTIES OF EPITAXIAL GAAS LAYERS FROM A TRIETHYL GALLIUM AND ARSINE SYSTEM

被引：87

作者：

SEKI, Y

TANNO, K

IIDA, K

ICHIKI, E

机构：

[1] NIPPON ELECT CO LTD, CENT RES LABS, 1753 SHIMONUMABE, KAWASAKI, JAPAN

[2] SUMITOMO CHEM CO LTD, KIKUMOTO WORKS, LIGHT MET DIV, KIKUMOTO CHO, NIIHAMA, EHIME, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 08期

关键词：

D O I：

10.1149/1.2134404

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1108 / 1112

页数：5

共 39 条

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[8] PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE FROM TRIMETHYLGALLIUM AND ARSINE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1419 - 1423
[9] ORIGIN OF HIGH RESISTANCE AT EPITAXIAL LAYER-SUBSTRATE INTERFACE OF GAAS GROWN BY VAPOR EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1971, 18 (10) : 420 - +
[10] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH
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