ORIGIN OF HIGH RESISTANCE AT EPITAXIAL LAYER-SUBSTRATE INTERFACE OF GAAS GROWN BY VAPOR EPITAXY

被引：18

作者：

IWASAKI, H

SUGIBUCHI, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 10期

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D O I：

10.1063/1.1653477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：420 / +

页数：1

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